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Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 11, 2009, Pages

Kinetics and relaxation of electroresistance in transition metal oxides: Model for resistive switching

(5) Das, N a Tsui, S a Xue, Y Y a Wang, Y Q a Chu, C W a,b,c

a University of Houston (United States)

b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

c LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350605146 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.80.115411 Document Type: Article

Times cited : (8)

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