Enhancement of stiffness of vertically standing Si nanosprings by energetic ions

Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

  Nagar, Rupali ^a   Mehta, B R ^a   Singh, J P ^a   Patzig, C ^b   Rauschenbach, B ^b   Kanjilal, D ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC DEFORMATION; ATOMIC FORCE MICROSCOPES; ELECTRONIC EXCITATION; ENERGETIC ION; ENERGY DENSITY; FORCE-DISTANCE SPECTROSCOPY; GLANCING ANGLE DEPOSITION; IRRADIATION CONDITIONS; LOGARITHMIC DEPENDENCE; MODERATE VALUE; NANOSPRINGS; NUCLEAR STOPPING; PER UNIT VOLUME; SHAPE ANISOTROPY; SURFACE-TO-VOLUME RATIO; VERY HIGH ENERGIES;

ANISOTROPY; ATOMIC SPECTROSCOPY; COMPRESSIVE STRENGTH; DEFORMATION; ENERGY DISSIPATION; IONS; IRRADIATION; SILICON; STIFFNESS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 79251497340     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3382913     Document Type: Article

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