Defects in Ge-doped Cz-Si annealed under high stress

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 82-87

  Misiuk, A ^a   Yang, Deren ^b   Surma, B ^a   Londos, C A ^c   Bak Misiuk, J ^d   Andrianakis, A ^c  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b ZHEJIANG UNIVERSITY   (China)

^c UNIVERSITY OF ATHENS   (Greece)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

Defect; Hydrostatic pressure; Si Ge; Thermal donor

Indexed keywords

ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROSTATIC PRESSURE; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; STRESS ANALYSIS;

DEFECT; SI-GE; THERMAL DONORS;

GERMANIUM;

EID: 33744796556     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.031     Document Type: Article

References (8)

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