Self-assembled ultralow-voltage flexible transparent thin-film transistors gated by SiO2-based solid electrolyte

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 547-552

  Jiang, Jie ^a   Sun, Jia ^a   Lu, Aixia ^a   Wan, Qing ^a,b  

^a HUNAN UNIVERSITY   (China)

^b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

One step self assemble; SiO2 based solid electrolyte; transparent flexible thin film transistors (TFTs); ultralow voltage

Indexed keywords

GATE CAPACITANCE; INDIUM TIN OXIDE; LOW-VOLTAGE; MICRO-POROUS; ON/OFF RATIO; OPERATION VOLTAGE; SELF-ASSEMBLE; SELF-ASSEMBLED; SELF-ASSEMBLING; SELF-ASSEMBLING PROCESS; SHADOW MASK; SIO2-BASED SOLID ELECTROLYTE; SUBTHRESHOLD SWING; TRANSPARENT ELECTRONICS; TRANSPARENT TFTS; TRANSPARENT THIN FILM TRANSISTOR; ULTRALOW VOLTAGE;

FLEXIBLE ELECTRONICS; SILICON COMPOUNDS; SOLID ELECTROLYTES;

THIN FILM TRANSISTORS;

EID: 79151484127     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2091451     Document Type: Article

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