Study of nano-mechanical properties for thin porous films through instrumented indentation: SiO2 low dielectric constant films as an example

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 2172-2174

  Herrmann, M ^a   Richter, F ^a   Schulz, S E ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Nanoindentation; Porous low k dielectrics; Yield stress; Young's modulus

Indexed keywords

COLLOIDS; ELASTIC MODULI; ELASTICITY; ELECTRIC CURRENTS; FILMS; MATERIALS PROPERTIES; MECHANICAL PROPERTIES; MOLECULAR BEAM EPITAXY; POROSITY; POROUS MATERIALS; SILICA; SILICA GEL; SILICATE MINERALS; SILICON COMPOUNDS; STRESS-STRAIN CURVES; STRESSES; THICK FILMS; VICKERS HARDNESS TESTING;

ELASTIC-PLASTIC CONTACTS; FILM PROPERTIES; INDENTER; INSTRUMENTED INDENTATION; NANO-MECHANICAL PROPERTIES; NANOINDENTATION; POROUS FILMS; POROUS LOW-K; POROUS LOW-K DIELECTRICS; SILICA XEROGELS; STRESS-STRAIN; SUBSTRATE PROPERTIES; THIN FILMS; YIELD STRAIN; YOUNG'S MODULUS;

YIELD STRESS;

EID: 52149095200     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.03.006     Document Type: Article

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