Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 89-94

  Cunha, Ana Isabela Araújo ^a   Pavanello, Marcelo Antonio ^b   Trevisoli, Renan Doria ^b   Galup Montoro, Carlos ^c   Schneider, Marcio Cherem ^c  

^a FEDERAL UNIVERSITY OF BAHIA   (Brazil)

^b CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^c FEDERAL UNIVERSITY OF SANTA CATARINA   (Brazil)

Author keywords

DG MOSFET; Parameter extraction; Threshold voltage

Indexed keywords

CHANNEL LENGTH; DG MOSFETS; DIFFUSION COMPONENTS; DIRECT DETERMINATION; DOUBLE-GATE MOSFETS; FUNCTION METHODS; LINEAR REGION; MOBILITY VARIATION; MOSFETS; NUMERICAL SIMULATION; SILICON FILMS; SIMULATION RESULT; TEMPERATURE RANGE; TEMPERATURE VALUES; THERMAL VOLTAGE; THRESHOLD CONDITION; TRANSCONDUCTANCE-TO-CURRENT RATIO;

GALERKIN METHODS; MOSFET DEVICES; PARAMETER EXTRACTION; THRESHOLD VOLTAGE;

DRAIN CURRENT;

EID: 78751648930     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.10.011     Document Type: Article

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