Cryogenic operation of FinFETs aiming at analog applications

Cryogenics

Volumn 49, Issue 11, 2009, Pages 590-594

  Pavanello, M A ^a,b   Martino, J A ^b   Simoen, E ^c   Claeys, C ^c,d  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

A. Semiconductors; D. Cryoelectronics

Indexed keywords

A. SEMICONDUCTORS; ANALOG APPLICATIONS; CRYOGENIC OPERATIONS; D. CRYOELECTRONICS; DOPING CONCENTRATION; FIGURES OF MERITS; FINFETS; NANOMETER ERA; OPERATIONAL REGIONS; OUTPUT CONDUCTANCE; READOUT ELECTRONICS; SINGLE-GATE DEVICES; SUBTHRESHOLD SLOPE; TEMPERATURE DEPENDENT; TEMPERATURE REDUCTION; VOLTAGE GAIN;

BOLOMETERS; CRYOGENICS; DRAIN CURRENT; FORCE MEASUREMENT; LOW TEMPERATURE ENGINEERING; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SUPERCONDUCTIVITY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CARRIER MOBILITY;

EID: 70350616420     PISSN: 00112275     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cryogenics.2008.12.012     Document Type: Article

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