Improvement in light-output power of InGaN/GaN LED by formation of nanosize cavities on p-GaN surface

Electrochemical and Solid-State Letters

Volumn 8, Issue 12, 2005, Pages

  Kang, Eun Jeong ^a   Huh, Chul ^b   Lee, Suk Hun ^c   Jung, Jong Je ^c   Lee, Song Jae ^d   Park, Seong Ju ^e  

^a SAMSUNG Electronics   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c LG Innotek Co Ltd   (South Korea)

^d Chungnam National University   (South Korea)

^e Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT EMITTING DIODES; PLASMA ETCHING; PLATINUM; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM WELLS;

ETCH MASK; EXTRACTION EFFICIENCY; INDUCTIVELY COUPLED PLASMA ETCHING; NANOSIZE CAVITIES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 28044470075     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2076987     Document Type: Article

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