Efficiency improvement of GaN-based LEDs with SiO2 microrod array and textured sidewalls

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 35-37

  Kao, Chien Chih ^a   Su, Yan Kuin ^a   Lin, Chuing Liang ^b   Chen, Jian Jhong ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

Direct heteroepitaxial lateral overgrowth (DHELO); Light emitting diodes (LEDs); Nitride; Textured sidewalls

Indexed keywords

BUFFERED OXIDE ETCH; EFFICIENCY IMPROVEMENT; ELECTRICAL PROPERTY; ELECTROLUMINESCENCE INTENSITY; FAR-FIELD PATTERNS; GAN BASED LED; GAN FILM; HETEROEPITAXIAL; INJECTION CURRENTS; LATERAL OVERGROWTH; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; NITRIDE BASED LIGHT EMITTING DIODES; WET-ETCHING PROCESS;

CURRENT DENSITY; DIODES; ELECTRIC PROPERTIES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; TEXTURING;

LIGHT EMITTING DIODES;

EID: 72949097006     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034673     Document Type: Article

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