Enhancement of the light output of GaN-based light-emitting diodes using surface-textured indium-tin-oxide transparent ohmic contacts

Displays

Volumn 29, Issue 3, 2008, Pages 254-259

  Huang, S M ^a   Yao, Y ^a   Jin, C ^a,b   Sun, Z ^a   Dong, Z J ^b  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b Delight Optoelectronics Co Ltd   (China)

Author keywords

Gallium nitride (GaN); Indium tin oxide; Light emitting diode (LED); Surface roughening

Indexed keywords

GALLIUM NITRIDE; INDIUM COMPOUNDS; LITHOGRAPHY; OHMIC CONTACTS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

INDIUM TIN OXIDES; INDUCTIVELY COUPLED PLASMA (ICP); OUTPUT POWER; SURFACE TEXTURED GAN LED CHIPS;

LIGHT EMITTING DIODES;

EID: 41449105168     PISSN: 01419382     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.displa.2007.08.008     Document Type: Article

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