Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate

Faguang Xuebao/Chinese Journal of Luminescence

Volumn 31, Issue 6, 2010, Pages 854-858

  Li, Bing Hui ^a   Yao, Bin ^a,b   Li, Yong Feng ^a   Deng, Rui ^b   Zhang, Zhen Zhong ^a   Liu, Wei Wei ^a   Shan, Chong Xin ^a   Zhang, Ji Ying ^a   Shen, De Zhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

Electroluminescence; Light emitting diode; Molecular beam epitaxy; ZnO

Indexed keywords

GAAS; GAAS SUBSTRATES; IMPROVING PERFORMANCE; P-TYPE GAAS; ULTRAVIOLET ELECTROLUMINESCENCE; ULTRAVIOLET EMISSION; VISIBLE EMISSIONS; ZNO; ZNO FILMS; ZNO LAYERS;

DIODES; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; GALLIUM ARSENIDE; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 78651480094     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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