Ab initio study of transition levels for intrinsic defects in silicon nitride

Journal of Physical Chemistry C

Volumn 115, Issue 2, 2011, Pages 561-569

  Di Valentin, Cristiana ^a   Palma, Giorgio ^a   Pacchioni, Gianfranco ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO STUDY; BAND GAPS; CHARGE STATE; CHARGE TRAPPING MEMORIES; CHARGE TRAPPING PROPERTIES; DEEP TRAPS; DENSITY FUNCTIONAL THEORY CALCULATIONS; HYBRID EXCHANGE; INTRINSIC DEFECTS; KOHN-SHAM LEVELS; N VACANCY; SHALLOW DEFECTS; SI ATOMS; SI CLUSTERS; SI-SI BONDS; SINGLE-PARTICLE; TRANSITION LEVEL; TRAPPING ABILITY;

ATOMS; CHARGE TRAPPING; CHEMICAL BONDS; DENSITY FUNCTIONAL THEORY; ELECTRON MOBILITY; SILICON NITRIDE;

SILICON;

EID: 78651433152     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp106756f     Document Type: Article

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