Analysis of carrier traps in silicon nitride film with discharge current transient spectroscopy, photoluminescence, and electron spin resonance

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 A, 2007, Pages 5762-5766

  Aozasa, Hiroshi ^a,b   Fujiwara, Ichiro ^b   Kamigaki, Yoshiaki ^a  

^a KAGAWA UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

DCTS; ESR; K center; Paramagnetic defect; Pb center; Photoluminescence; Silicon danglingbond; Silicon nitride; Trap

Indexed keywords

CONDUCTIVE FILMS; ELECTRIC DISCHARGES; ELECTRON TRAPS; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; TRANSIENT ANALYSIS;

CONDUCTION BAND; DISCHARGE CURRENT TRANSIENT SPECTROSCOPY (DCTS); PARAMAGNETIC DEFECTS; SILICON DANGLING BONDS;

SILICON NITRIDE;

EID: 34548706046     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5762     Document Type: Article

References (18)

1. B. D. Salvo, C. Gerardi, R. van Schaijk, S. A. Lombardo, D. Corso, C. Plantamura, S. Serafino, G. Ammendola, M. van Duuren, P. Goarin, W. Y. Mei, K. van der Jeugd, T. Baron, M. Gely, P. Mur, and S. Deleonibus: IEEE Trans. Devices Mater. Reliab. 4 (2004) 377.
2. I. Fujiwara, H. Aozasa, A. Nakamura, Y. Komatsu, and Y. Hayashi: Jpn. J. Appl. Phys. 39 (2000) 417.
3. M. Specht, U. Dorda, L. Dreeskornfeld, J. Kretz, F. Hofmann, M. Städele, R. J. Luyken, W. Ròsner, H. Reisinger, E. Landgraf, T. Schulz, J. Hartwich, R. Kömmling, and L. Risch: IEDM Tech Dig., 2004, p. 1083.
4. Y. L. Yang and M. H. White: Solid-State Electron. 44 (2000) 949.
5. C. Svensson and I. Lundström: J. Appl. Phys. 44 (1973) 4657.
6. T. Katsube, Y. Adachi, and T. Ikoma: Solid-State Electron. 19 (1976) 11.
7. V. J. Kapoor and S. B. Bibyk: in The Physics of MOS Insulator, ed. G. Lucovsky, S. T. Pantelides, and F. L. Faleener (Pergamon, New York, 1980) p. 117.
8. H. Matsuura, M. Yoshimoto, and H. Matsunami: Jpn. J. Appl. Phys. 34 (1995) L185.
9. H. Matsuura, T. Hase, Y. Sekimoto, M. Uchikura, and M. Shimizu: J. Appl. Phys. 91 (2002) 2085.
10. H. Aozasa, I. Fujiwara, A. Nakamura, and Y. Komatsu: Jpn. J. Appl. Phys. 38 (1999) 1441.
11. E. H. Poindexter and W. L. Warren: J. Electrochem. Soc. 142 (1995) 2508.
12. S. Fujita and A. Sasaki: J. Electrochem. Soc. 132 (1985) 398.
13. Y. Kamigaki, S. Minami, and H. Kato: J. Appl. Phys. 68 (1990) 2211.
14. HP4156A user's manual.
15. H. Aozasa, I. Fujiwara, K. Nomoto, S. Tanaka, and T. Kobayashi: in ULSI Process Integration II, ed. C. L. Cleys, F. Gonzalez, J. Murota, and K. Saraswat (Electrochemical. Society, Pennington, NJ, 2001) PV2001-2, p. 534.
16. L. Lundkvist, I. Lundström, and C. Svensson: Solid-State Electron. 16 (1973) 811.
17. I. Fujiwara: private communication.
18. K. Nomoto, G. Asayama, and T. Kobayashi: Jpn. J. Appl. Phys. 43 (2004) 2211.