Electronic band structure and effective masses of electrons and holes in the α and β phases of silicon nitride

Physics of the Solid State

Volumn 49, Issue 9, 2007, Pages 1628-1632

  Shaposhnikov, A V ^a   Petrov, I P ^a   Gritsenko, V A ^a   Kim, C W ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34548832529     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063783407090041     Document Type: Article

References (14)

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8. ICSD database 2003 Collection; http://icsd.ill.fr/icsd/index.html, Entry #92156.
9. ICSD database 2003 Collection; http://icsd.ill.fr/icsd/index.html, Entry #79798.
10. S.-Y. Ren and W. Y. Ching, Phys. Rev. B: Condens. Matter 23, 5454 (1981).
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13. V. A. Gritsenko, Yu. N. Morokov, and Yu. N. Novikov, Appl. Surf. Sci. 113/114, 417 (1997).
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