A study of defects and surface properties in AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates

Materials Research Society Symposium Proceedings

Volumn 955, Issue , 2006, Pages 333-338

  Sin, Yongkun ^a   Kim, Hyun I ^a   Adams, Paul ^a   Stupian, Gary ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CHARGE DENSITY; HALL MOBILITY; NUCLEATION; SILICON CARBIDE; SURFACE DEFECTS;

CHARGE SHEET DENSITY; NUCLEATION LAYERS; SEMI-INSULATING (SI) SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 40949136602     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0955-i11-02     Document Type: Conference Paper

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