Fabrication of 4H-SiC planar MESFETs on high-purity semi-insulating substrates

Solid State Phenomena

Volumn 124-126, Issue PART 1, 2007, Pages 109-112

  Yim, Jeonghyuk ^a   Song, Hokeun ^a   Moon, Jeonghyun ^a   Seo, Hanseok ^a   Lee, Jongho ^a   Na, Hoonjoo ^a   Lee, Jaebin ^b   Kim, Hyeongjoon ^a  

^a Seoul National University   (South Korea)

^b R and D Center   (South Korea)

Author keywords

HPSI (high purity semi insulating) substrate; Ion implantation; MESFET; SiC

Indexed keywords

ION IMPLANTATION; SILICON CARBIDE;

HIGH-PURITY SEMI-INSULATING SUBSTRATE; PLASMA DAMAGE; SACRIFICIAL OXIDE;

MESFET DEVICES;

EID: 38549159646     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/3-908451-31-0.109     Document Type: Conference Paper

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