Characteristics of Pt/SrTiO3/Pb(Zr0.52, Ti0.48)O3/SrTiO3/Si ferroelectric gate oxide structure

Thin Solid Films

Volumn 354, Issue 1, 1999, Pages 251-255

  Suk Shin, Dong ^a   Tae Park, Sang ^a   Sang Choi, Hoon ^a   Choi, In Hoon ^a   Lee, Jeong Yong ^b  

^a Korea University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTROCHEMICAL ELECTRODES; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; INTERDIFFUSION (SOLIDS); LEAD COMPOUNDS; LEAKAGE CURRENTS; NONDESTRUCTIVE EXAMINATION; PLATINUM; RANDOM ACCESS STORAGE; SILICON; STRONTIUM COMPOUNDS;

FERROELECTRIC GATE OXIDE STRUCTURES;

DIELECTRIC FILMS;

EID: 0343168102     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00429-0     Document Type: Article

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