Effects of post-annealing temperature on structural, optical, and electrical properties of MgxZn1-xO films by RF magnetron sputtering

Journal of Crystal Growth

Volumn 314, Issue 1, 2011, Pages 136-140

  Li, Jia ^a   Huang, Jin Hua ^a   Song, Wei Jie ^a   Zhang, Yu Long ^a   Tan, Rui Qin ^b   Yang, Ye ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b NINGBO UNIVERSITY   (China)

Author keywords

A1. Crystal structure; A3. Physical vapor deposition; B1. Zinc compounds; B2. MgZnO films

Indexed keywords

A1. CRYSTAL STRUCTURE; A3. PHYSICAL VAPOR DEPOSITION; ANNEALING TEMPERATURES; B1. ZINC COMPOUNDS; B2. MGZNO FILMS; CRYSTALLINITIES; ELECTRICAL PROPERTY; POST-ANNEALING TEMPERATURE; QUARTZ SUBSTRATE; RF-MAGNETRON SPUTTERING;

ANNEALING; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; MAGNETRON SPUTTERING; PHYSICAL VAPOR DEPOSITION; QUARTZ; THIN FILMS; ZINC; ZINC COMPOUNDS;

ELECTRIC PROPERTIES;

EID: 78651099220     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.154     Document Type: Article

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