Preparation and characteristics of the wide gap semiconductor Mg 0.18Zn0.82O thin film by L-MBE

Microelectronics Journal

Volumn 36, Issue 2, 2005, Pages 125-128

  He, Yong Ning ^a   Zhang, Jing Wen ^a   Yang, Xiao Dong ^b   Xu, Qing An ^b   Liu, Xing Hui ^a   Zhu, Chang Chun ^a   Hou, Xun ^a,b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b XI AN INSTITUTE OF OPTICS AND PRECISION MECHANICS   (China)

Author keywords

Ceramic target; L MBE; MgZnO alloy thin film; ZnO thin film

Indexed keywords

CERAMIC MATERIALS; FABRICATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SINTERING; THIN FILMS; ZINC OXIDE;

BAND-GAP MODULATION; CERAMIC TARGET; MGZNO ALLOY THIN FILMS; ZNO THIN FILMS;

MAGNESIUM COMPOUNDS;

EID: 12444278277     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.11.005     Document Type: Article

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