Improved stability of high-performance ZnO/ZnMgO hetero-MISFETs

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 543-545

  Sasa, Shigehiko ^a   Hayafuji, Takeo ^a   Kawasaki, Motoki ^a   Koike, Kazuto ^a   Yano, Mitsuaki ^a   Inoue, Masataka ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Al2O3; Gate dielectric; HfO2; MISFET; Molecular beam epitaxy; Thin film transistor (TFT); ZnO ZnMgO

Indexed keywords

ACCESS RESISTANCE; GATE DIELECTRIC LAYER;

DIELECTRIC MATERIALS; GATES (TRANSISTOR); HYSTERESIS; MOLECULAR BEAM EPITAXY; THIN FILM TRANSISTORS; TRANSCONDUCTANCE;

MISFET DEVICES;

EID: 34447287373     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.899448     Document Type: Article

References (13)

1. R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors," Appl. Phys. Lett., vol. 82, no. 5, pp. 733-735, Feb. 2003.
2. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, and T. Kawai, "Transparent thin film transistors using ZnO as an active channel layer and their electrical properties," J. Appl. Phys., vol. 93, no. 3, pp. 1624-1630, Feb. 2003.
3. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Conçalves, A. J. S. Marques, R. F. P. Martins, and L. M. N. Pereira, "Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature," Appl. Phys. Lett., vol. 85, no. 13, pp. 2541-2543, Sep. 2004.
4. J. D. Albrecht, P. P. Ruden, S. Limpijumnong, W. R. Lambrecht, and K. F. Brennan, "High field electron transport properties of bulk ZnO," J. Appl. Phys., vol. 86, no. 12, pp. 6864-6867, Dec. 1999.
5. B. J. Norris, J. Anderson, J. F. Wager, and D. A. Keszler, "Spin-coated zinc oxide transparent transistors," J. Phys. D, Appl. Phys., vol. 36, no. 20, pp. L105-L107, Oct. 2003.
6. 7 gate insulator for transparent and flexible electronics," Appl. Phys. Lett., vol. 87, no. 4, p. 043 509, Jul. 2005.
7. W. B. Jackson, R. L. Hoffman, and G. S. Herman, "High-performance flexible zinc tin oxide field-effect transistors," Appl. Phys. Lett. vol. 87, no. 19, p. 193503, Nov. 2005.
8. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, "Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor," Science, vol. 300, no. 5623, pp. 1269-1272, May 2003.
9. 0.3O/ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy," Appl. Phys. Lett., vol. 87, no. 11, p. 112 106, Sep. 2005.
10. J. Nishii, A. Ohtomo, K. Ohtani, H. Ohno, and M. Kawasaki, "Highmobility field-effect transistors based on single-crystalline ZnO channels," Jpn. J. Appl. Phys., vol. 44, no. 38, pp. L1193-L1195, Sep. 2005.
11. S. Sasa, M. Ozaki, K. Koike, M. Yano, and M. Inoue, "Highperformance ZnO/ZnMgO field-effect transistors using a hetero-metal-insulator-semiconductor structure," Appl. Phys. Lett. vol. 89, no. 5, p. 053 502, Aug. 2006.
12. 0.4O heterointerface," Jpn. J. Appl. Phys., vol. 43, no. 10B, pp. L1372-L1375, Oct. 2004.
13. K. Ogata, T. Honden, T. Tanite, T. Komuro, K. Koike, S. Sasa, M. Inoue, and M. Yano, "Electron-cyclotron-resonance plasma etching of the ZnO layers grown by molecular-beam epitaxy," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 22, no. 3, pp. 531-533, May 2004