Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al xGa1-x N/GaN heterostructures at high temperatures

Chinese Physics B

Volumn 19, Issue 12, 2010, Pages

  Lin, Fang ^a   Shen, Bo ^a   Lu, Li Wu ^a   Ma, Nan ^a   Xu, Fu Jun ^a   Miao, Zhen Lin ^a   Song, Jie ^a   Liu, Xin Yu ^b   Wei, Ke ^b   Huang, Jun ^b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Frenkel poole emission; Gate leakage current; High temperature

Indexed keywords

ANNEALING TEMPERATURES; ANNEALING TREATMENTS; CAP LAYERS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL PROPERTY; FRENKEL-POOLE EMISSION; GATE-LEAKAGE CURRENT; HETEROSTRUCTURES; HIGH TEMPERATURE; PERFORMANCE COMPARISON; REVERSE LEAKAGE CURRENT; SCHOTTKY CONTACTS; TEMPERATURE DEPENDENT; THERMAL STABILITY; THERMAL-ANNEALING; TWO-DIMENSIONAL ELECTRON GAS MOBILITY;

ALUMINUM; ANNEALING; CRYSTALS; DENSITY OF GASES; ELECTRIC PROPERTIES; ELECTRON GAS; ELECTRONS; GALLIUM; LEAKAGE CURRENTS; PLATINUM; THERMODYNAMIC STABILITY; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 78650976020     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/12/127304     Document Type: Article

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