Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal

Microelectronics Reliability

Volumn 49, Issue 4, 2009, Pages 357-364

  Fukai, Yoshino K ^a   Kurishima, Kenji ^a   Kashio, Norihide ^a   Ida, Minoru ^a   Yamahata, Shoji ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEGRADATION; DIFFUSION IN SOLIDS; METALS; PHOTODEGRADATION; POLARIZATION; REFRACTORY MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

ACCELERATED TESTS; ATOMIC COMPOSITIONS; CONTACT LAYERS; CONVENTIONAL METALS; CRITICAL TIME; EMITTER ELECTRODES; EMITTER RESISTANCES; ENERGY DISPERSIVE X-RAY SPECTROSCOPIES; HIGH CURRENT DENSITIES; HIGH TEMPERATURES; INDUCED DEGRADATIONS; INITIAL VALUES; INP; INTERSTITIALS; JUNCTION TEMPERATURES; METAL DIFFUSIONS; TRANSMISSION ELECTRON DIFFRACTIONS;

REFRACTORY METALS;

EID: 63649094123     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.01.005     Document Type: Article

References (11)

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