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Volumn 108, Issue 12, 2010, Pages

A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DIFFUSIONS; CARRIER DYNAMICS; DISLOCATION DEFECTS; DISLOCATION DENSITIES; DISLOCATIONS DENSITIES; DRIFT DIFFUSION; EXPERIMENTAL WORKS; IN-PLANE; INGAN QUANTUM WELLS; INGAN/GAN; INTERFACE ROUGHNESS; INTERNAL QUANTUM EFFICIENCY; NON-POLAR; NON-RADIATIVE RECOMBINATIONS; NONPOLAR QUANTUM WELLS; POLARIZATION EFFECT; QUANTUM CONFINED STARK EFFECT; QUANTUM WELL; RADIATIVE EFFICIENCY; RADIATIVE LIFETIME; RADIATIVE RECOMBINATION;

EID: 78650914843     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3524544     Document Type: Article
Times cited : (18)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.