Detailed correlation of electrical and breakdown characteristics to the structural properties of ALD grown HfO2- and ZrO2-based capacitor dielectrics

ECS Transactions

Volumn 25, Issue 4, 2009, Pages 357-366

  Schroeder, U ^a   Weinreich, W ^b   Erben, E ^a   Mueller, J ^b   Wilde, L ^b   Heitmann, J ^a   Agaiby, R ^a   Zhou, D ^a   Jegert, G ^a   Kersch, A ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHARGE TRAPPING; DIELECTRIC MATERIALS; HAFNIUM OXIDES; MIM DEVICES; TITANIUM NITRIDE; ZIRCONIA;

AMORPHOUS DIELECTRICS; BREAKDOWN BEHAVIOR; BREAKDOWN CHARACTERISTICS; CAPACITOR DIELECTRICS; CRYSTALLINE DIELECTRIC; INTERFACE FORMATION; IV CHARACTERISTICS; NITROGEN DIFFUSION;

ATOMIC LAYER DEPOSITION;

EID: 74249083146     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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