Electrical characterization and transmission electron microscopy assessment of isolation of AIGaN/GaN high electron mobility transistors with oxygen ion implantation

Japanese Journal of Applied Physics

Volumn 49, Issue 2 Part 1, 2010, Pages

  Shiu, Jin Yu ^a   Lu, Chung Yu ^a   Su, Ting Yi ^c   Huang, Rong Tan ^d   Zirath, Herbert ^b   Rorsman, Niklas ^b   Chang, Edward Yi ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AIGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEFECT CLUSTER; DEFECT INTERACTIONS; ELECTRICAL CHARACTERIZATION; FIELD PLATES; HIGH POWER MICROWAVES; MAXIMUM OUTPUT POWER; MULTIENERGY; OXYGEN ION IMPLANTATION; POST-ANNEALING TEMPERATURE; SAPPHIRE SUBSTRATES; SHEET RESISTIVITY; TEM; THERMALLY STABLE; TRAPPING CENTERS;

DEFECTS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; ION IMPLANTATION; MICROSTRUCTURE; OXYGEN; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77950803975     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.021001     Document Type: Article

References (22)

1. U. K. Mishra, P. Parikh, and Y. F. Wu: Proc. IEEE 90 (2002) 1022.
2. S. C. Binari, H. B. Dietrich, G. Kelner, L. B. Rowland, K. J. Doverspike, and D. K. Wickenden: J. Appl. Phys. 78 (1995) 3008.
3. S. J. Pearton, C. B. Vartuli, J. C. Zolper, C. Yuan, and R. A. Stall: Appl. Phys. Lett. 67 (1995) 1435.
4. R. G. Wilson, C. B. Vartuli, C. R. Abernathy, S. J. Pearton, and J. M. Zavada: Solid-State Electron. 38 (1995) 1329.
5. J. C. Zolper: J. Cryst. Growth 178 (1997) 157.
6. B. Boudart, Y. Guhel, J. C. Pesant, P. Dhamelincourt, and M. A. Poisson: J. Raman Spectrosc. 33 (2002) 283.
7. B. Boudart, Y. Guhel, J. C. Pesant, P. Dhamelincourt, and M. A. Poisson: J. Phys.: Condens. Matter 16 (2004) S49.
8. T. Oishi, N. Miura, M. Suita, T. Nanjo, Y. Abe, T. Ozeki, H. Ishikawa, T. Egawa, and T. Jimbo: J. Appl. Phys. 94 (2003) 1662.
9. J. C. Zolper, A. G. Baca, and S. A. Chalmers: Appl. Phys. Lett. 62 (1993) 2536.
10. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren: J. Appl. Phys. 94 (2003) 1662.
11. G. Dang, X. A. Cao, F. Ren, S. J. Pearton, J. Han, A. G. Baca, and R. J. Shul: J. Vac. Sci. Technol. B 17 (1999) 2015.
12. G. Hanington, Y. M. Hsin, Q. Z. Liu, P. M. Asbeck, S. S. Lau, M. Asif Khan, J. W. Yang, and Q. Chen: Electron. Lett. 34 (1998) 193.
13. M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J. C. Pesant, Z. Bougrioua, M. Germain, J. C. De Jaeger, and C. Gaquiere: Microwave Opt. Technol. Lett. 46 (2005) 311.
14. J. W. Johnson, E. L. Piner, A. Vescan, R. Therrien, P. Rajagopal, J. C. Roberts, J. D. Brown, S. Singhal, and K. J. Linthicum: IEEE Electron Device Lett. 25 (2004) 459.
15. J. Y. Shiu, J. C. Huang, V. Desmaris, C. T. Chang, C. Y. Lu, K. Kumakura, T. Makimoto, H. Zirath, N. Rorsman, and E. Y. Chang: IEEE Electron Device Lett. 28 (2007) 476.
16. S. O. Kucheyev, J. S. Williams, and S. J. Pearton: Mater. Sci. Eng. R 33 (2001) 51.
17. J. Kuzm?́k, P. Javorka, A. Alam, M. Marso, M. Heuken, and P. Kordo? s: IEEE Trans. Electron Devices 49 (2002) 1496.
18. J.-Y. Shiu, V. Desmaris, N. Rorsman, K. Kumakura, T. Makimoto, H. Zirath, and E. Y. Chang: Semicond. Sci. Technol. 22 (2007) 717.
19. S. J. Pearton, M. P. Lannuzzi, C. L. Reynolds, and L. Peticolas: Appl. Phys. Lett. 52 (1988) 395.
20. S. M. Sze: J. Appl. Phys. 38 (1967) 2951.
21. V. Desmaris, M. Rudzinski, N. Rorsman, P. R. Larssen, H. Zirath, T. C. Rodle, and H. F. F. Jos: IEEE Trans. Electron Devices 53 (2006) 2413.
22. R. Chu, Y. Zhou, J. Liu, D. Wang, K. J. Chen, and K. M. Lau: IEEE Trans. Electron Devices 52 (2005) 438.