GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 406-410

  Zhu, Ting Gang ^a   Chowdhury, Uttiya ^a   Wong, Michael M ^a   Denyszyn, Jonathan C ^a   Dupuis, Russell D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

AlGaN; GaN; Ideality factor; Ion implantation; Metal organic chemical vapor deposition; p i n rectifier; p n junction; Schottky barrier height; Schottky barrier rectifier

Indexed keywords

CURRENT DENSITY; ION IMPLANTATION; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

SCHOTTKY-BARRIER RECTIFIERS;

GALLIUM NITRIDE;

EID: 0036575089     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0092-9     Document Type: Article

References (9)