Enhanced Ohmic contact via graphitization of polycrystalline silicon carbide

Applied Physics Letters

Volumn 97, Issue 26, 2010, Pages

  Liu, F ^a   Hsia, B ^a   Carraro, C ^a   Pisano, A P ^a,b   Maboudian, R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONTACT RESISTIVITIES; ELECTRICAL CONTACTS; ELEVATED TEMPERATURE; FREE SURFACES; GRAPHITIC CARBONS; HARSH ENVIRONMENT; HIGH STABILITY; HIGH THERMAL STABILITY; NANOCRYSTALLINES; POLY-CRYSTALLINE SILICON CARBIDES; POLYCRYSTALLINE 3C-SIC; VACANCY DEFECTS;

ELECTRIC CONTACTORS; GRAPHITIZATION; OHMIC CONTACTS; PLATINUM; POLYCRYSTALLINE MATERIALS; POLYSILICON; SURFACE DEFECTS; THERMODYNAMIC STABILITY; VACANCIES;

SILICON CARBIDE;

EID: 78650878383     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3531552     Document Type: Article

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