SCOPUS 정보 검색 플랫폼

Optical Materials

Volumn 33, Issue 3, 2011, Pages 332-335

Controlling the yellow luminescence intensity from n-GaN during cathodoluminescence

(1) Dhamodaran, S a

a INDIAN INSTITUTE OF TECHNOLOGY KANPUR (India)

Author keywords

Defects; GaN; Luminescence; Optical materials and properties

Indexed keywords

CATHODOLUMINESCENCE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LUMINESCENCE; PIXELS; SAPPHIRE;

CATHODOLUMINESCENCE SPECTROSCOPY; DEFECT CONCENTRATIONS; DENSITY OF DEFECTS; HYDRIDE VAPOUR PHASE EPITAXIES; NEAR BAND EDGE EMISSIONS; OPTICAL MATERIALS AND PROPERTIES; SPATIAL RESOLUTION; YELLOW LUMINESCENCE;

DEFECTS;

EID: 78650559469 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/j.optmat.2010.09.003 Document Type: Article

Times cited : (3)

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