Preparation of negative electron affinity gallium nitride photocathode

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7658, Issue , 2010, Pages

  Qiao, Jianliang ^a,b   Chang, Benkang ^a   Qian, Yunsheng ^a   Du, Xiaoqing ^c   Zhang, Yijun ^a   Wang, Xiaohui ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b NANYANG INSTITUTE OF TECHNOLOGY   (China)

^c CHONGQING UNIVERSITY   (China)

Author keywords

gallium nitride; growth technology; negative electron affinity; quantum efficiency; spectral response

Indexed keywords

ACTIVATION METHOD; ACTIVATION PROCESS; CLEAN SURFACES; CLEANING METHODS; EVALUATION SYSTEM; GROWTH TECHNOLOGIES; GROWTH TECHNOLOGY; METAL ORGANIC; NEA PHOTOCATHODE; NEGATIVE ELECTRON AFFINITY; PHOTOCURRENT CURVES; PHOTOELECTRIC DETECTORS; SPECTRAL RESPONSE; SPECTRAL RESPONSE MEASUREMENTS; UV PHOTOCATHODE; VACUUM SYSTEM; VAPOR PHASE; VAPOR PHASE EPITAXIAL;

CESIUM; CHEMICAL CLEANING; DETECTORS; DISPLAY DEVICES; ELECTRON AFFINITY; ELECTRON BEAMS; ELECTRONS; ENERGY CONVERSION; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MANUFACTURE; MATERIALS TESTING; METAL HALIDES; OPTOELECTRONIC DEVICES; ORGANOMETALLICS; PHOTOCATHODES; PHOTOELECTRICITY; PHOTONIC DEVICES; TECHNOLOGY; TESTING; VAPORS;

QUANTUM EFFICIENCY;

EID: 78650453167     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.864677     Document Type: Conference Paper

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