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Volumn 5898, Issue , 2005, Pages 1-8

Progress on development of UV photocathodes for photon-counting applications at NASA GSFC

Author keywords

Galium Nitride; GaN; Photocathode; Photon counting; Ultraviolet; UV

Indexed keywords

GAN; PHOTOEMISSIVE DETECTORS; PHOTON-COUNTING; ULTRAVIOLET; UV;

EID: 29344467172     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.617517     Document Type: Conference Paper
Times cited : (26)

References (16)
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    • submitted
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  • 5
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    • Han, B.1    Gregie, J.M.2    Wessels, B.W.3
  • 9
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    • Oxygen species in Cs/O activated gallium nitride (GaN) negative electron affinity photocathodes
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    • Field-assisted photoemission from InP.InGaAsP photocathode with p/n. junction
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    • Formation of AlN and GaN nanocolumns on Si(111) using molecular beam epitaxy with ammonia as a nitrogen source
    • K.A. Bertness, A. Roshko, N.A. Sanford, J.B. Schlager, M.H. Gray, "Formation of AlN and GaN nanocolumns on Si(111) using molecular beam epitaxy with ammonia as a nitrogen source", Physica Status Solidi, Vol. 2, No. 7, pp. 2369-2372, 2005.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.