Advances in wide-band gap semi-conductor based photocathode devices for low light level applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4650, Issue 1, 2002, Pages 94-103

  Ulmer, M P ^a   Wessels, B W ^a   Siegmund, O H W ^b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

GaN; Photocathode; UV astronomy; Wide band gap semi conductor

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; PHOTONS; ULTRAVIOLET DETECTORS;

MICRO-CHANNEL PLATES (MCP);

PHOTOCATHODES;

EID: 0036054997     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.467651     Document Type: Article

References (27)

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4. Progress in the fabrication of GaN Photo-Cathodes
5. Electrical properties of p-type GaN:Mg Co-doped with oxygen
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7. High-resolution cross delay line detectors for the GALEX mission
8. Cosmic origins spectograph FUV detector
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14. Low resistivity AlxGa1-xN/GaN superlattices for UV emitters: Development of AlGaN based UV LED and lasers (280 nm)
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18. In-flight performance of the MAMA detectors on the space telescope imaging spectrograph
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