Comparative study of GaN and GaAs photocathodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6621, Issue , 2008, Pages

  Qiao, Jianliang ^a,b   Chang, Benkang ^a   Yang, Zhi ^a   Tian, Si ^a,b   Gao, Youtang ^a,b  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b NANYANG INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Activation manners; GaAs; GaN; NEA; Stability

Indexed keywords

ELECTRON AFFINITY; ELECTRON SOURCES; GALLIUM NITRIDE; QUANTUM EFFICIENCY; QUANTUM YIELD; SEMICONDUCTING GALLIUM ARSENIDE;

ACTIVATION LAYERS; ACTIVATION MANNERS; ANGLE DISTRIBUTION; NEGATIVE ELECTRON AFFINITY (NEA) PHOTOCATHODES;

PHOTOCATHODES;

EID: 41149178512     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.790664     Document Type: Conference Paper

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