Characteristics of a front-illuminated visible-blind UV photodetector based on GaN p-i-n photodiodes with high quantum efficiency

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 5, 2006, Pages 896-899

  You, Da ^a   Tang, Yingwen ^a   Zhao, Degang ^b   Xu, Jintong ^a   Xu, Yunhua ^a   Gong, Haimei ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

AlGaN; p i n; Quantum efficiency; Response spectrum

Indexed keywords

ALUMINUM; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; PHOTODETECTORS; PHOTODIODES; QUANTUM EFFICIENCY; SIGNAL TO NOISE RATIO;

ALUMINUM GALLIUM NITRIDE; LOW DARK CURRENT DENSITY; PEAK RESPONSIVITY; RESPONSE SPECTRUM;

ULTRAVIOLET DETECTORS;

EID: 33747041938     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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