Multi-information measurement technology for GaAs photocathode preparation

Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology

Volumn 26, Issue 3, 2006, Pages 172-175

  Zou, Jijun ^a,b   Qian, Yunsheng ^a   Chang, Benkang ^a   Wang, Hui ^a   Wang, Shiyun ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b EAST CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Field bus; GaAs photocathode; Multi information; Photocurrent; Pressure; Thermal desorption

Indexed keywords

CLEANING; HEATING; PHOTOCURRENTS; PRESSURE; SEMICONDUCTING GALLIUM ARSENIDE;

FIELD BUS; MULTI-INFORMATION MEASUREMENT; THERMAL DESORPTION;

PHOTOCATHODES;

EID: 33748161035     PISSN: 16727126     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. Baum A W, Spicer W E, Pease R F W. Negative electron affinity photocathodes as high-performance electron sources Part I: Achievement of ultra-high brightness from an NEA photocathode, SPIE, 1995, 2522: 208-219
2. Stocker B J. AES and LEFD study of the activation of GaAs-CsO negative electron affinity surfaces. Surface Science. 1975, 47: 501-513
3. Masamichi Yamada and Yuichi Ide. Anomalous behaviors observed in the isothermal desorption of GaAs surface oxides. Surface Science. 1995, 339: L914-L918
4. Allwood D A, Mason N J and Walker P J. In situ characterization of III-V substrate oxide desorption by surface photoabsorption in MOVPE. Materials Science and Engineering B. 1999, 66: 83-87
5. Proix F, Akremi A and Zhong Z T. Effects of vacuum annealing on the electronic properties of cleaved GaAs. Journal of Physics C: Solid State Physics, 1983, 16: 5449-5463
6. Bernard Goldstein. LEED-Auger characterization of GaAs during activation to negative electron affinity by the adsorption of Cs and O. Surface Science. 1975, 47: 143-161
7. Rodway D C, Allenson M B. In situ surface study of the activating layer on GaAs (Cs, O) photocathodes. Journal of Physics D: Applied Physics, 1986, 19: 1353-1371