Property evaluation of NEA photocathodes

Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology

Volumn 21, Issue 6, 2001, Pages 445-447+451

  Qian, Yunsheng ^a   Zong, Zhiyuan ^a   Chang, Benkang ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Diffusion length; Negative electron affinity; Photocathode; Property evaluation; Quantum yield; Surface escape probability

Indexed keywords

DIFFUSION; ELECTRON OPTICS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE;

NEGATIVE ELECTRON AFFINITY; QUANTUM YIELD;

PHOTOCATHODES;

EID: 0035521589     PISSN: 02539748     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. High-performance GaAs photocathodes
2. 1-xP/GaAs: (Cs-O) transmission photocathodes
3. Broadband GaAs transmission photocathode
4. GaAs photocathodes for low light level imaging
5. Current status of negative electron affinity devices