Low-frequency noise behavior of tunneling field effect transistors

Applied Physics Letters

Volumn 97, Issue 24, 2010, Pages

  Wan, J ^a   Le Royer, C ^b   Zaslavsky, A ^a,c   Cristoloveanu, S ^a  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT DESIGNS; FREQUENCY DEPENDENCE; GATE LENGTH; HIGH AMPLITUDES; LOW-FREQUENCY NOISE; RANDOM TELEGRAPH SIGNAL NOISE; RTS NOISE; SILICON-ON-INSULATOR SUBSTRATES; SMALL AREA; TUNNELING FIELD-EFFECT TRANSISTORS;

DRAIN CURRENT; TELEGRAPH; THERMAL NOISE;

FIELD EFFECT TRANSISTORS;

EID: 78650387906     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3526722     Document Type: Article

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