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Volumn 97, Issue 24, 2010, Pages

Nonlinear electrical properties of Si three-terminal junction devices

(10) Meng, Fantao a,b Sun, Jie a Graczyk, Mariusz a Zhang, Kailiang c Prunnila, Mika d Ahopelto, Jouni d Shi, Peixiong e Chu, Jinkui b Maximov, Ivan a Xu, H Q a

a LUND UNIVERSITY (Sweden)

b DALIAN UNIVERSITY OF TECHNOLOGY (China)

c TIANJIN UNIVERSITY OF TECHNOLOGY (China)

d VTT TECHNICAL RESEARCH CENTRE OF FINLAND (Finland)

e TECHNICAL UNIVERSITY OF DENMARK (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC ELECTRON TRANSPORT; DESIGN PRINCIPLES; ELECTRICAL MEASUREMENT; FABRICATED DEVICE; HIGH MOBILITY; II-IV SEMICONDUCTORS; NON-LINEAR ELECTRICAL PROPERTIES; ROOM TEMPERATURE; SILICON DEVICES; SILICON ON INSULATOR WAFERS; THREE-TERMINAL BALLISTIC JUNCTIONS; THREE-TERMINAL JUNCTIONS;

BALLISTICS; EQUIPMENT; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON WAFERS;

ELECTRIC PROPERTIES;

EID: 78650376760 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3526725 Document Type: Article

Times cited : (20)

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