Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

Applied Physics Letters

Volumn 90, Issue 10, 2007, Pages

  Nakamura, Tatsuya ^a   Kasai, Seiya ^a   Shiratori, Yuta ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; JUNCTION GATE FIELD EFFECT TRANSISTORS; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS;

ASYMMETRIC GATE VOLTAGES; NANOWIRE JUNCTION DEVICES; WRAP GATES (WPG);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33947187773     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2711374     Document Type: Article

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