Self-switching of branched multiterminal junctions: A ballistic half-adder

Applied Physics Letters

Volumn 83, Issue 12, 2003, Pages 2462-2464

  Worschech, L ^a   Reitzenstein, S ^a   Hartmann, P ^a   Kaiser, S ^a   Kamp, M ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDERS; ELECTRIC RESISTANCE; ELECTRONS; GATES (TRANSISTOR); SWITCHING; VOLTAGE CONTROL;

NANOELECTRONIC DEVICES;

SEMICONDUCTOR JUNCTIONS;

EID: 0142121653     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1613049     Document Type: Article

References (21)

1. D. K. Ferry and S. M. Goodnick, Transport in Nanostructures (Cambridge University Press, Cambridge, UK, 1997).
2. M. Takahashi, T. Ohno, Y. Sakakibara, and K. Takayama, IEEE Trans. Electron Devices 48, 1380 (2001).
3. Y. Cui and C. M. Lieber, Science 291, 851 (2001).
4. X. Duan, Y. Huang, Y Cui, J. Wang, and C. M. Lieber, Nature (London) 409, 66 (2001).
5. Y. Huang, X. Duan, Y Cui, L. J. Lauhon, K.-H. Kim, and C. M. Lieber, Science 294, 1313 (2001).
6. C. Papadopoulos, A. Rakitin, J. Li, A. S. Vedeneev, and J. M. Xu, Phys. Rev. Lett. 85, 3476 (2000).
7. D. L. Klein, R. Roth, A. K. Alivisatos, and P. L. McEuen, Nature (London) 389, 699 (1997).
8. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
9. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
10. G. E. Moore, Electronics 38, 114 (1965); http://www.intel.com/research/silicon/moorespaper.pdf
11. R. Fleischmann and T. Geisel, Phys. Rev. Lett. 89, 016804 (2002).
12. A. M. Song, A. Lorke, A. Kriele, J. P. Kotthaus, W. Wegscheider, and M. Bichler, Phys. Rev. Lett. 80, 3831 (1998).
13. A. N. Andriotis, M. Menon, D. Srivastava, and L. Chemozatonskii, Phys. Rev. Lett. 87, 066802 (2001).
14. B. Korenblum and E. I. Rashba, Phys. Rev. Lett. 89, 096803 (2002).
15. Ya. M. Blanter, F. W. J. Hekking, and M. Büttiker, Phys. Rev. Lett. 81, 1925 (1998).
16. S. Reitzenstein, L. Worschech, P. Hartmann, M. Kamp, and A. Forchel, Phys. Rev. Lett. 89, 226804 (2002).
17. L. Worschech, H. Q. Xu, A. Forchel, and L. Samuelson, Appl. Phys. Lett. 79, 3287 (2001).
18. H. L. Störmer, A. C. Gossard, W. Wiegmann, and K. Baldwin, Appl. Phys. Lett. 39, 912 (1981).
19. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
20. Further details of technology are given in L. Worschech, F. Beuscher, and A. Forchel, Appl. Phys. Lett. 75, 578 (1999).
21. A. A. Shashkin, V. T. Dolgopolov, E. V. Deviatov, B. Irmer, A. G. C. Haubrich, J. P. Kotthaus, M. Bichler, and W. Wegscheider, JETP Lett. 69, 603 (1999).