Selection of well contact densities for latchup-immune minimal-area ics

IEEE Transactions on Nuclear Science

Volumn 57, Issue 6 PART 1, 2010, Pages 3575-3581

  Dodds, N A ^a   Hutson, J M ^b   Pellish, J A ^c   Reed, R A ^a   Kim, H S ^d   Berg, M D ^d   Friendlich, M R ^d   Phan, A M ^d   Seidleck, C M ^d   Xapsos, M A ^c   Deng, X ^e   Baumann, R C ^e   Schrimpf, R D ^a   King, M P ^a   Massengill, L W ^a   Weller, R A ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

^d MEI Technologies   (United States)

^e TEXAS INSTRUMENTS   (United States)

Author keywords

Design rule; external resistor; hardening by design; latchup test structure; single event latchup

Indexed keywords

DESIGN RULES; EXTERNAL RESISTOR; HARDENING BY DESIGN; LATCH-UPS; SINGLE EVENT LATCH-UP;

CMOS INTEGRATED CIRCUITS; HARDENING; RESISTORS;

DESIGN;

EID: 78650339898     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2082562     Document Type: Conference Paper

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