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Volumn 482-485, Issue , 2001, Pages 495-500
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A low-temperature scanning tunneling microscopy study on the Sn- and Zn-doped InP(1 1 0) surfaces
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Author keywords
Indium phosphide; Low index single crystal surfaces; Scanning tunneling microscopy; Semiconducting surfaces; Surface defects; Surface electronic phenomena (work function, surface potential, surface states, etc.); Surface structure, morphology, roughness, and topography; Tunneling
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL ORIENTATION;
ELECTRIC POTENTIAL;
FERMI LEVEL;
LOW TEMPERATURE EFFECTS;
MORPHOLOGY;
OSCILLATIONS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
SINGLE CRYSTALS;
SURFACE ROUGHNESS;
TIN;
ZINC;
LOW INDEX SINGLE CRYSTAL SURFACES;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0035919094
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(00)01072-4 Document Type: Article |
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Times cited : (8)
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References (10)
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