Active region cascading for improved performance in InAs-GaSb superlattice LEDs

IEEE Journal of Quantum Electronics

Volumn 44, Issue 12, 2008, Pages 1242-1247

  Koerperick, Edwin J ^a   Olesberg, Jonathon T ^a,b   Hicks, James L ^a,c   Prineas, John P ^a   Boggess, Thomas F ^a  

^a University of Iowa   (United States)

^b ASL Analytical Inc   (United States)

^c ARKANSAS STATE UNIVERSITY   (United States)

Author keywords

Electroluminescence; Light emitting diodes (LEDs); Semiconductor growth; Semiconductor superlattices

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; EXTRATERRESTRIAL ATMOSPHERES; GALLIUM ALLOYS; INDIUM ARSENIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PROJECTION SYSTEMS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SOLID STATE LASERS; SUPERLATTICES;

ACTIVE REGIONS; EXTERNAL QUANTUM EFFICIENCIES; HIGH RESOLUTIONS; IMPROVED PERFORMANCES; LIGHT EMITTING DIODE LEDS; LIGHT-EMITTING DIODES (LEDS); MID-WAVE INFRARED; OPTICAL EMISSIONS; WAVE OUTPUTS;

SEMICONDUCTOR SUPERLATTICES;

EID: 57049139329     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2008.2003145     Document Type: Article

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