Semiconductor screen dynamic visible to infrared scene converter

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4818, Issue , 2002, Pages 147-156

  Malyutenko, V K ^a   Bogatyrenko, V V ^a   Malyutenko, O Yu ^a   Snyder, Donald R ^b,c   Huber, August ^b   Norman, James ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

2D IR imaging; 8 12 m spectral range; Dynamic IR scene projector; Free carrier absorption; Pixel less scene; Semiconductors; Thermal emission; Visible to infrared conversion

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSITIONS; IMAGE CONVERTERS; INFRARED TRANSMISSION; LIGHT ABSORPTION; LIGHT MODULATION; LIGHT REFLECTION; OPTICAL PROJECTORS; OPTICAL PUMPING; SEMICONDUCTOR MATERIALS; THERMAL CONDUCTIVITY OF SOLIDS;

DYNAMIC INFRARED SCENE PROJECTORS (DISP); FILL FACTOR; THERMAL EMISSION;

INFRARED IMAGING;

EID: 0037968260     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.458090     Document Type: Conference Paper

References (5)

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3. T.S. Moss, "Photon pressure effect in semiconductors", Phys.stat.sol. (a) 8, pp. 223-232, 1971.
4. R. Robinson, J. Oleson, L. Rubin and S. McHugh, "MIRAGE: System overview and status," Pros. SPIE 4027, pp. 387-398, 2000.
5. Ukrainian Patent Disclosure Number 2000095565, Sep 28, 2001. USAF/ISP Joint Patent Disclosure Number D00601, May 2002.