4 - 10 μm positive and negative luminescent diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3279, Issue , 1998, Pages 104-112

  Ashley, T ^a   Beswick, J A ^a   Crowder, J G ^a   Dutton, D T ^a   Elliott, C T ^a   Gordon, N T ^a   Johnson, A D ^a   Maxey, C D ^a   Pryce, G J ^a   Wang, C H ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

Indium antimonide; Infrared; Light emitting diode; Mercury cadmium telluride; Negative luminescence

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTANCE; ELECTRIC SPACE CHARGE; ENERGY GAP; FERMI LEVEL; HETEROJUNCTIONS; IMAGE SENSORS; INFRARED IMAGING; INFRARED RADIATION; LUMINESCENT DEVICES; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN;

THERMAL IMAGERS;

LIGHT EMITTING DIODES;

EID: 0004523086     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304415     Document Type: Conference Paper

References (13)

1. Proc. NATO workshop 'narrow gap semiconductors'
2. Proc. 6th int. conf. 'narrow gap semiconductors'
3. Proc. 7th int. conf. on narrow-gap semiconductors