Mn-doped ZnO nanocrystals embedded in Al2O3: Structural and electrical properties

Nanotechnology

Volumn 21, Issue 50, 2010, Pages

  Khodorov, A ^a   Levichev, S ^a   Rolo, A G ^a   Karzazi, O ^b   Chahboun, A ^a,b   Novak, J ^c   Vorobiev, A ^c   Tavares, C J ^a   Eyidi, D ^d   Riviere J P ^d   Beaufort, M F ^d   Barradas, N P ^e   Alves, E ^e   Barber, D J ^f   Lanceros Mendez, S ^a   Gomes, M J M ^a  

^a UNIVERSITY OF MINHO   (Portugal)

^b SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d UNIVERSITÉ DE POITIERS   (France)

^e INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^f UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CRYSTALLINE PHASE; GI-SAXS; GRAZING INCIDENCE SMALL-ANGLE X-RAY SCATTERING; GRAZING INCIDENCE X-RAY DIFFRACTION; HIGH-RESOLUTION TRANSMISSION MICROSCOPIES; MATRIX; MN-DOPED; MN-DOPED ZNO; MULTI-LAYERED STRUCTURE; PARTICLE-INDUCED X-RAY EMISSION ANALYSIS; PULSED-LASER DEPOSITION TECHNIQUE; RESONANT RAMAN SCATTERING; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SIZE EFFECTS; STRUCTURAL AND ELECTRICAL PROPERTIES; VOLTAGE SHIFT; WURTZITES; ZNO;

DOPING (ADDITIVES); MANGANESE; MANGANESE OXIDE; NANOCRYSTALS; PULSED LASER DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCATTERING; X RAY DIFFRACTION; X RAY SCATTERING; X RAYS; ZINC OXIDE; ZINC SULFIDE;

ELECTRIC PROPERTIES;

EID: 78650077539     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/50/505705     Document Type: Article

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