Roughness in GaN/InGaN films and multilayers determined with Rutherford backscattering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 217, Issue 3, 2004, Pages 479-497

  Barradas, N P ^a,b   Alves, E ^a,b   Pereira, S ^c,d   Shvartsman, V V ^c   Kholkin, A L ^c   Pereira, E ^c   O'Donnell, K P ^d   Liu, C ^d   Deatcher, C J ^d   Watson, I M ^d   Mayer, M ^e  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^e MAX PLANCK INSTITUT FÜR PLASMAPHYSIK   (Germany)

Author keywords

Gallium nitride; Indium gallium nitride; Multilayers; Roughness; Rutherford backscattering; Thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; DATA REDUCTION; MULTILAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS;

INDIUM GALLIUM NITRIDE; STRUCTURAL QUALITY;

THIN FILMS;

EID: 11144354261     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.009     Document Type: Article

References (29)

1. Nakamura S. Science. 281:1998;956.
2. J.H. Edgar, S. Strite, I Akasaki (Eds.), Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, INSPEC, 1999, A 7.11, p. 264.
3. Pereira S., Correia M.R., Pereira E., O'Donnell K.P., Alves E., Sequeira A.D., Franco N., Watson I.M., Deatcher C.J. Appl. Phys. Lett. 80:2002;3913.
4. Pereira S., Correia M.R., Pereira E., Alves E., Trager-Cowan C., O'Donnell K.P. Phys. Rev. B. 64:2001;205311.
5. Pereira S., Pereira E., Alves E., Barradas N.P., O'Donnell K.P., Liu C., Deatcher C.J., Watson I.M. Appl. Phys. Lett. 81:2002;2950.
6. Behrisch R., Grigull S., Kreissig U., Grötzschel R. Nucl. Instr. and Meth. B. 136-138:1998;628.
7. Mayer M. Nucl. Instr. and Meth. B. 194:2002;177.
8. Barradas N.P. J. Phys. D. 34:2001;2109.
9. Barradas N.P., Sequeira A.D., Franco N., Myronov M., Mironov O.A., Philips P.J., Parker E.H.C. Modern Phys. Lett. B. 15:2001;1297.
10. Barradas N.P. Nucl. Instr. and Meth. B. 190:2002;247.
11. Tavares C.J., Rebouta L., Alves E., Barradas N.P., Pacaud J., Riviére J.P. Nucl. Instr. and Meth. B. 188:2002;90.
12. Deatcher C.J., Liu C., Pereira S., Lada M., Cullis A.G., Sun Y.J., Brandt O., Watson I.M. Semicond. Sci. Technol. 18:2003;212.
13. Barradas N.P., Jeynes C., Webb R. Appl. Phys. Lett. 71:1997;291. www.ee.surrey.ac.uk/Research/SCRIBA/ndf/.
14. Jeynes C., Barradas N.P., Marriott P.K., Jenkin M., Wendler E., Boudreault G., Webb R.P. J. Phys. D: Appl. Phys. 36:2003;R97.
15. Szilágyi E. Nucl. Instr. and Meth. B. 161-163:2000;37.
16. Amsel G., Battistig G., L'Hoir A. Nucl. Instr. and Meth. B. 201:2003;325.
17. Barradas N.P., Soares J.C., da Silva M.F., Pászti F., Szilágyi E. Nucl. Instr. and Meth. B. 94:1994;266.
18. Yesil I.M., Assmann W., Huber H., Löbner K.E.G. Nucl. Instr. and Meth. B. 136-138:1998;623.
19. Stoquert J.P., Szörényi T. Phys. Rev. B. 66:2002;144108.
20. Kántor Z., Simon A., Kovács M. Appl. Surf. Sci. 208-209:2003;540.
21. Szilágyi E., Pászti F. Nucl. Instr. and Meth. B. 85:1994;616.
22. Barradas N.P., Jeynes C., Mironov O.A., Phillips P.J., Parker E.H.C. Nucl. Instr. and Meth. B. 139:1998;239.
23. Elliman R.G., Timmers H., Palmer G.R., Ophel T.R. Nucl. Instr. and Meth. B. 136-138:1998;649.
24. Bauer P., Steinbauer E., Biersack J.P. Nucl. Instr. and Meth. B. 64:1992;711.
25. Pereira S., Correia M.R., Pereira E., Trager-Cowan C., Sweeney F., O'Donnell K.P., Alves E., Franco N., Sequeira A.D. Appl. Phys. Lett. 81:2002;1207.
26. Pereira S., Correia M.R., Pereira E., O'Donnell K.P., Alves E., Barradas N.P., Sequeira A.D., Franco N., Watson I.M., Liu C. Phys. Stat. Solidi (c). 0:2002;302.
27. Chen Y., Takeuchi T., Amano H., Akasaki I., Yamada N., Kaneko Y., Wang S.Y. Appl. Phys. Lett. 72:1998;710.
28. People R., Bean J.C. Appl. Phys. Lett. 47:1985;322. 49 (1986) 229.
29. Berning P.R., Niiler A. Nucl. Instr. and Meth. B. 73:1993;178.