Memory effect on CdSe nanocrystals embedded in SiO2 matrix

Solid State Communications

Volumn 148, Issue 3-4, 2008, Pages 105-108

  Levichev, S ^a   Basa, P ^b   Horvath Zs J ^b   Chahboun, A ^c   Rolo, A G ^a   Barradas, N P ^d   Alves, E ^d   Gomes, M J M ^a  

^a UNIVERSITY OF MINHO   (Portugal)

^b INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^c FSDM   (Morocco)

^d INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

A. Semiconductors; B. Magnetron sputtering; D. Memory effect; D. Recombination and trapping

Indexed keywords

CADMIUM ALLOYS; CADMIUM COMPOUNDS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY; SILICON COMPOUNDS;

A. SEMICONDUCTORS; B. MAGNETRON SPUTTERING; CDSE NANOCRYSTALS; D. MEMORY EFFECT; D. RECOMBINATION AND TRAPPING; MEMORY EFFECTS;

NANOSTRUCTURED MATERIALS;

EID: 51749087721     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.07.047     Document Type: Article

References (25)

1. Tiwari S., Rana F., Hanafi H., Hartstein A., Crabbé E.F., and Chan K. Appl. Phys. Lett. 68 (1996) 1377
2. King Y.-Chin., King T.-J., and Hu C. IEEE Trans. Electron Devices 48 (2001) 696
3. Fischbein M.D., and Drndic M. Appl. Phys. Lett. 86 (2005) 193106
4. Mohanta K., Majee S.K., Batabyal S.K., and Pal A.J. J. Phys. Chem. B 110 (2006) 18231
5. Kraus R.M., Lagoudakis P.G., Rogach A.L., Talapin D.V., Weller H., Lupton J.M., and Feldmann J. Phys. Rev. Lett. 98 (2007) 017401
6. Li F., Son D.-I., Cha H.-M., Seo S.-M., Kim B.-J., Kim H.-J., Jung J.-H., and Kim T.W. Appl. Phys. Lett. 90 (2007) 222109
7. Achtstein A.W., Karl H., Zhenhua S., and Stritzker B. Mat. Sci. Eng. B 147 (2008) 249
8. Rolo A.G., Vasilevskiy M.I., Conde O., and Gomes M.J.M. Thin Solid Films 336 (1998) 58
9. Caldelas P., Rolo A.G., Chahboun A., Foss S., Levichev S., Finstad T.G., Gomes M.J.M., and Conde O. J. Nanosci. Nanotechnol. 2 (2008) 572
10. Okumura H., Twisselmann D.J., McMichael R.D., Huang M.Q., Hsu Y.N., Laughlin D.E., and McHenry M.E. J. Appl. Phys. 93 (2003) 6528
11. Das K., Goswami M.L.N., Dhar A., Mathur B.K., and Ray S.K. Nanotechnology 18 (2007) 175301
12. P. Basa, Semiconductor nanocrystals in dielectrics for memory purposes, Ph.D. Thesis, Budapest University of Technology and Economics, 2008. www.mfa.kfki.hu/~basa
13. Alivisatos A.P., Harris T.D., Brus L.E., and Jayaraman A. J. Chem. Phys. 89 (1988) 5979
14. Trallero-Giner C., Debernardi A., Cardona M., Menéndez-Proupín E., and Ekimov A.I. Phys. Rev. B. 57 (1998) 4664
15. Rolo A.G., and Vasilevskiy M.I. J. Raman Spectroscopy 38 (2007) 618
16. Kayanuma Y. Phys. Rev. B 38 (1988) 9797
17. Basa P., Petrik P., Fried M., Dobos L., Pécz B., and Tóth L. Physica E 38 (2007) 76
18. Kim J.K., Cheong H.J., Kim Y., Yi J.-Y., Bark H.J., Bang S.H., and Cho J.H. Appl. Phys. Lett. 82 (2003) 2527
19. Streetman B.G., and Banerjee S. Solid State Electronic Devices. fifth edition (2000), Prentice-Hall, Upper Saddle River, NJ
20. Sze S.M., and Kwok K.Ng. Physics of Semiconductor Devices. third edition (2007), Wiley-Interscience, New York
21. Lundström K.I., and Svensson C.M. IEEE Trans. Electron Devices ED-19 (1972) 826
22. Ginger D.S., and Greenham N.C. Synth. Met. 101 (1999) 425
23. Basa P., Horváth Zs.J., Jaszi T., Pap A.E., Dobos L., Pécz B., Tóth L., and Szollosi P. Physica E 38 (2007) 71
24. Ádám M., Horváth Zs.J., Bársony I., Szölgyémy L., Vázsonyi E., and Tuyen V.V. Thin Solid Films 255 (1995) 266
25. Horváth Zs.J., Jarrendähl K., Ádám M., Szabó I., Tuyen V.V., and Czigány Zs. Appl. Surf. Sci. 190 (2002) 403