Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2374-2377

  Levichev, S ^a   Chahboun, A ^b   Basa, P ^c   Rolo, A G ^a   Barradas, N P ^d   Alves, E ^d   Horvath, Zs J ^c   Conde, O ^e   Gomes, M J M ^a  

^a UNIVERSITY OF MINHO   (Portugal)

^b FSDM   (Morocco)

^c INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^d INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^e UNIVERSITY OF LISBON   (Portugal)

Author keywords

CdSe; Charging effect; Nanocrystals; SiO2

Indexed keywords

CADMIUM ALLOYS; CADMIUM COMPOUNDS; HETEROJUNCTIONS; MAGNETRONS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; SILICON COMPOUNDS;

AVERAGE SIZES; CAPACITANCE VOLTAGES; CDSE; CDSE NANOCRYSTALS; CHARGING EFFECT; CHARGING EFFECTS; FRENKEL MECHANISMS; MEMORY EFFECTS; RETENTION TIMES; RF MAGNETRON SPUTTERING; RF MAGNETRONS; SIO2; SPUTTERING TECHNIQUES; X-RAY DIFFRACTIONS;

MAGNETRON SPUTTERING;

EID: 56649106475     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.09.003     Document Type: Article

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