Nonpolar a-plane ZnO growth and nucleation mechanism on (1 0 0) (La, Sr)(Al, Ta)O3 substrate

Materials Chemistry and Physics

Volumn 125, Issue 3, 2011, Pages 791-795

  Chou, Mitch M C ^a   Hang, Da Ren ^a   Chen, Chenlong ^a   Wang, Shih Chuan ^a   Lee, Chun Yu ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Chemical vapor deposition; Transmission electron microscopy; X ray diffraction; ZnO

Indexed keywords

A-PLANE; CHEMICAL VAPOR DEPOSITION METHODS; FILM CRYSTALLINITY; GREEN BAND; NEAR BAND EDGE EMISSIONS; NON-POLAR; NUCLEATION MECHANISM; NUCLEATION SITES; ORIENTATIONAL RELATIONSHIP; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; TRANSMISSION ELECTRON; ZNO; ZNO EPITAXIAL FILMS;

CHEMICAL VAPOR DEPOSITION; DIFFRACTION; ELECTRONS; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; NUCLEATION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TANTALUM; X RAY DIFFRACTION; X RAYS; ZINC OXIDE;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 78649988541     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.09.057     Document Type: Article

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