Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si-H2 bonds in the films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1536-1539

  Koga, Kazunori ^a   Kaguchi, Naoto ^a   Shiratani, Masaharu ^a   Watanabe, Yukio ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAS STAGNATION; PHOTON-COUNTING LASER-LIGHT-SCATTERING (PCLLS) METHOD; SHEATH BOUNDARY CONDITIONS; SILICON CLUSTERS;

ABSORPTION; CORRELATION METHODS; DEGRADATION; ELECTRODES; HYDROGEN; HYDROGEN BONDS; LASER BEAM EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STAINLESS STEEL; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VOLUME FRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 4444319396     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1763905     Document Type: Conference Paper

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